2N5551C

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA Low Noise : NF=8dB (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB PC Tj Tstg RATING 180 160 6 600 100 625 150 -55 150 UNIT V V V mA mA mW L M C 2N5551C EPITAXIAL PLANAR NPN TRANSISTOR BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. COLLECTOR 3. BASE TO-92 1997. 5. 2 Revision No : 0 1/2 2N5551C ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage DC Current Gain * Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Input Capacitance Small-Signal Current Gain Noise Figure * * IEBO V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) hFE(2) hFE(3) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib hfe NF * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. TEST CONDITI...