SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Vo...
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH
VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon
Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.), VCB=120V Low Saturation
Voltage : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA Low Noise : NF=8dB (Max.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC IB PC Tj Tstg
RATING 180 160 6 600 100 625 150
-55 150
UNIT V V V mA mA mW
L M
C
2N5551
EPITAXIAL PLANAR NPN TRANSISTOR
BC
JA
KE G
D
H
FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. EMITTER 2. BASE 3. COLLECTOR
TO-92
1997. 5. 2
Revision No : 0
1/2
2N5551
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage * Emitter-Base Breakdown
Voltage
DC Current Gain
*
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage Transition Frequency Collector Output Capacitance Input Capacitance Small-Signal Current Gain
Noise Figure
* *
IEBO V(BR)CBO V(BR)CEO V(BR)EBO
hFE(1) hFE(2) hFE(3) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2
fT Cob Cib hfe
NF
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
TEST CONDITION...