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2N5305 Datasheet

Part Number 2N5305
Manufacturers ETC
Logo ETC
Description SILICON DARLINGTON TRANSISTORS
Datasheet 2N5305 Datasheet2N5305 Datasheet (PDF)

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  2N5305   2N5305






Part Number 2N5308
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description NPN SILICON DARLINGTON TRANSISTOR
Datasheet 2N5305 Datasheet2N5308 Datasheet (PDF)

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com .

  2N5305   2N5305







Part Number 2N5308
Manufacturers Micro Electronics
Logo Micro Electronics
Description NPN Transistor
Datasheet 2N5305 Datasheet2N5308 Datasheet (PDF)

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  2N5305   2N5305







Part Number 2N5308
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Darlington Transistor
Datasheet 2N5305 Datasheet2N5308 Datasheet (PDF)

2N5308 Discrete POWER & Signal Technologies 2N5308 C BE TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 40 12 1.2 -55 to +150 Units V .

  2N5305   2N5305







Part Number 2N5307
Manufacturers Micro Electronics
Logo Micro Electronics
Description NPN Transistor
Datasheet 2N5305 Datasheet2N5307 Datasheet (PDF)

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  2N5305   2N5305







Part Number 2N5307
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Darlington Transistor
Datasheet 2N5305 Datasheet2N5307 Datasheet (PDF)

2N5307 Discrete POWER & Signal Technologies 2N5307 C BE TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 40 12 1.2 -55 to +150 Units V .

  2N5305   2N5305







SILICON DARLINGTON TRANSISTORS

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