2N5246

2N5246 2N5246 N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Ratings 30 -30 10 -55 ~ 150 Units V V mA °C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics V(BR)GSS IGSS VGS(off) IDSS gfs goss Parameter Test Condition IG = 1.0µA, VDS = 0 VGS = 25V, VDS = 0 VDS = 15V, ID = 1.0nA VDS = 15V, VGS = 0 VGS = 0V, VDS = 15V, f = 1.0kHz VGS = 0V, VDS = 15V, f = 1.0kHz -0.5 1.5 3000 Min. -30 -1.0 -4.0 7.0 9500 50 Max. Units V nA V mA µmhos µmhos Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage Zero-Gate Voltage Drain Current * Forward Transferconductance Common- Source Output Conductance On Characteristics Small Signal Characteristics * Pulse Test: Pulse ≤ 300µs Thermal Characteristics TA=25°C unless otherwise ...