2N5194

2N5193 2N5194 2N5195 CentralTM Semiconductor Corp. PNP SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5193 Series types are Silicon PNP Power Transistors, manufactured by the epitaxial base process, designed for medium power amplifier and switching applications. These devices are complementary to the NPN 2N5190 Series types. TO-126 CASE MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance (Junction to Case) SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg ΘJC 2N5193 40 40 2N5194 60 60 5.0 4.0 1.0 40 -65 to +150 3.12 2N5195 80 80 UNITS V V V A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C) SYMBOL TEST CONDITIONS ICBO VCB=Rated VCBO ICEX ICEO VCE=Rated VCEO, VEB=1.5V VCE=Rated VCEO IEBO BVCEO VEB=5.0V IC=100mA (2N5193) BVCEO BVCEO IC=100mA (2N5194) IC=100mA (2N5195) VCE(SAT) VCE(SAT) IC=1.5A, IB=150mA IC=4.0A, IB=1.0A VBE(ON) hFE VCE=2.0V, IC=1.5A VCE=2.0V, IC=1.5A (2N5193, 2N5194) hFE VCE=2.0V, IC=1.5A (2N5195) hFE VCE=2.0V, IC=4.0A (2N5193, 2N5194) hFE VCE=2.0V, IC=4.0A (2N5195) fT VCE=10V, IC=1.0A, f=1.0MHz MIN 40 60 80 25 20 10 7.0 2.0 MAX 100 100 1.0 1.0 0.6 1.4 1.2 100 80 UNITS μA μA mA mA V V V V V V MHz R1 (10-February 2009) CentralTM Semiconductor Corp. 2N5193 2N5194 2N5195 PNP SILICON POWER TRANSISTORS TO-126 CASE - MECHANI...