2N5151, 2N5151L, 2N5153, 2N5153L
PNP Power Silicon Transistor
Features
• Available in commercial, JAN, JANTX, JANTXV, JA...
2N5151, 2N5151L, 2N5153, 2N5153L
PNP Power Silicon Transistor
Features
Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/545
TO-5 Package: 2N5151L, 2N5153L TO-39 (TO-205AD) Package: 2N5151, 2N5153
Rev. V5
Electrical Characteristics (TA = 25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min.
Max.
Collector - Emitter Breakdown
Voltage Emitter - Base Cutoff Current
Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current
IC = -100 mA dc, IB = 0
VEB = -4.0 V dc, IC = 0 VEB = -5.5 V dc, IC = 0 VCE = -60 V dc, VBE = 0 VCE = -100 V dc, VBE = 0 VCE = -40 V dc, IB = 0
V(BR)CEO V dc
IEBO1 IEBO2 ICES1 ICES2
µA dc mA dc
µA dc mA dc
ICEO µA dc
-80 — — —
—
-1.0 -1.0
-1.0 -1.0
-50
Forward Current Transfer Ratio
Collector - Emitter Saturation
Voltage Emitter - Base
Voltage Non-Saturation
Emitter - Base Saturation
Voltage
VCE = -5.0 V dc, IC = -50 mA dc 2N5151, L 2N5153, L
VCE = -5.0 V dc, IC = -2.5 A dc 2N5151, L 2N5153, L
VCE = -5.0 V dc, IC = -5.0 A dc 2N5151, L 2N5153, L
IC = -2.5 A dc, IB = -250 mA dc IC = -5.0 A dc, IB = -500 mA dc
VCE = -5.0 Vdc, IC = -2.5 A dc
IC = -2.5 A dc, IB = -250 mA dc IC = -5.0 A dc, IB = -500 mA dc
hFE -
VCE(sat)1 VCE(sat)2
VBE
V dc V dc
VBE(sat)1 VBE(sat)1
V dc
20 50
30 70
20 40
—
—
—
90 200
-0.75 -1.50 -1.45
-1.45 -2.20
Collector—Emitter Cutoff Current Forward - Current Transfer Ratio
TC = +150oC VCE = -60 V dc, VBE = +2 V dc
TC = -55oC VCE = -5 V dc, IC...