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2N5056 Datasheet

Part Number 2N5056
Manufacturers Central Semiconductor Corporation
Logo Central Semiconductor Corporation
Description (2N5056 / 2N5057) PNP Silicon Switching Transistor
Datasheet 2N5056 Datasheet2N5056 Datasheet (PDF)

www.DataSheet4U.com 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

  2N5056   2N5056






Part Number 2N5059
Manufacturers Motorola
Logo Motorola
Description GENERAL PURPOSE TRANSISTOR
Datasheet 2N5056 Datasheet2N5059 Datasheet (PDF)

2N5058 2N5059 CASE 79-02, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a TA = 25°C Derate above 25°C Total Device Dissipation (a Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N5058 2N5059 VCEO • 300 vCBO 300 v EBO 7.0 250 250 6.0 ic 150 PD - 1.0 6.67 Pd TJ. Tstg 5.0 33.3 - 65 to +.

  2N5056   2N5056







Part Number 2N5059
Manufacturers Central Semiconductor Corp
Logo Central Semiconductor Corp
Description NPN SILICON TRANSISTOR
Datasheet 2N5056 Datasheet2N5059 Datasheet (PDF)

2N5058 2N5059 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5058 and 2N5059 are silicon NPN epitaxial planar transistors designed for high voltage general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Th.

  2N5056   2N5056







Part Number 2N5058S
Manufacturers ETC
Logo ETC
Description NPN SILICON ANNULAR TRANSISTORS
Datasheet 2N5056 Datasheet2N5058S Datasheet (PDF)

2N5058S (SILICON) NPN SILICON ANNULAR TRANSISTORS · .. designed for high·voltage amplifier and driver applications. • High Collector· Emitter Breakdown Voltage BVCEO = 300 Vdc (Min) - 2N5058S • DC Current Gain Specified 5.0 mAdc to 100 mAdc • Coliector·Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 30 mAdc NPNSILICON AMPLIFIER/DRIVER TRANSISTORS *MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power .

  2N5056   2N5056







Part Number 2N5058
Manufacturers Seme LAB
Logo Seme LAB
Description NPN EPITAXIAL PLANAR BIPOLAR TRANSISTOR
Datasheet 2N5056 Datasheet2N5058 Datasheet (PDF)

2N5058 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) NPN EPITAXIAL PLANAR BIPOLAR TRANSISTOR 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • CECC SCREENING OPTIONS • JAN LEVEL SCREENING OPTIONS 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 2.54 (0.100) 45° TO–39 (TO-205AD) PACKAGE Underside View PIN 1 – Emitter PIN .

  2N5056   2N5056







Part Number 2N5058
Manufacturers Motorola
Logo Motorola
Description GENERAL PURPOSE TRANSISTOR
Datasheet 2N5056 Datasheet2N5058 Datasheet (PDF)

2N5058 2N5059 CASE 79-02, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a TA = 25°C Derate above 25°C Total Device Dissipation (a Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N5058 2N5059 VCEO • 300 vCBO 300 v EBO 7.0 250 250 6.0 ic 150 PD - 1.0 6.67 Pd TJ. Tstg 5.0 33.3 - 65 to +.

  2N5056   2N5056







(2N5056 / 2N5057) PNP Silicon Switching Transistor

www.DataSheet4U.com 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .


2009-01-24 : SRF1020    SRF1030    SRF1040    SRF1050    SRF1060    2N4907    2N4908    2N4909    SRF1090    SRF10100   


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