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2N4003K
N-Channel Enhancement Mode Power MOSFET
Description
www.DataSheet.co.kr 2N4003K N-Channel Enhancement Mode Power
MOSFET
P b Lead(Pb)-Free 1 GATE 3 DRAIN * * Low Gate
Voltage
Threshold Vgs(th) to Facilitate Drive Circuit Design. * Low Gate Charge for Fast Switching. * ESD Protected Gate. * Minimum Breakdown
Voltage
Rating of 30V. Features: * Gate Pretection Diode SOURCE 2 DRAIN CURRENT 0.5 AMPERES DRAIN ...
Weitron Technology
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