SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
2N3906SC
EPITAXIAL PLANAR PNP TRANSIST...
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
2N3906SC
EPITAXIAL PLANAR PNP TRANSISTOR
FEATURES Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation
Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Complementary to 2N3904SC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base
Voltage
VCBO
-40
Collector-Emitter
Voltage
VCEO
-40
Emitter-Base
Voltage
VEBO
-5
Collector Current
IC -200
Base Current
IB -50
Collector Power Dissipation
PC * 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )
UNIT V V V mA mA mW
2015. 5. 12
Revision No : 0
1/3
2N3906SC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICEX VCE=-30V, VEB=-3V
Collector Cut-off Current
ICBO VCB=-30V, IE=0
Emitter Cut-off Current
IEBO
VEB=-3V, IC=0
Collector-Base Breakdown
Voltage
V(BR)CBO IC=-10 A, IE=0
Collector-Emitter Breakdown
Voltage * V(BR)CEO IC=-1mA, IB=0
Emitter-Base Breakdown
Voltage
* V(BR)EBO IE=-10 A, IC=0
DC Current Gain
* hFE VCE=-1V, IC=-10mA
Collector-Emitter Saturation
Voltage * VCE(sat) IC=-50mA, IB=-5mA
Base-Emitter Saturation
Voltage
* VBE(sat) IC=-50mA, IB=-5mA
Transition Frequency
fT VCE=-20V, IC=-10mA, f=100MHz
Delay Time
td
Switching Time
Rise Time Storage Time
tr tstg
Fall Time
tf
* Pulse Te...