2N3906S

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Low Collector Output Capacitance : Cob=4.5pF(Max.) @VCB=-5V. Complementary to 2N3904S. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -40 Collector-Emitter Voltage VCEO -40 Emitter-Base Voltage VEBO -5 Collector Current IC -200 Base Current IB -50 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On 99.5% Alumina 10 8 0.6 ) UNIT V V V mA mA mW 2N3906S EPITAXIAL PLANAR PNP TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking ZAType Name Lot No. 2005. 4. 21 Revision No : 3 1/4 2N3906S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Base Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage ICEX IBL V(BR)CBO * V(BR)CEO * V(BR)EBO hFE(1) VCE=-30V, VEB=-3V VCE=-30V, VEB=-3V IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, ...