SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=50n...
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. Excellent DC Current Gain Linearity. Low Saturation
Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. Low Collector Output Capacitance : Cob=4pF(Max.) @VCB=5V. Complementary to 2N3906S.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base
Voltage
VCBO
60
Collector-Emitter
Voltage
VCEO
40
Emitter-Base
Voltage
VEBO
6
Collector Current
IC 200
Base Current
IB 50
Collector Power Dissipation
PC * 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* : Package Mounted On 99.5% Alumina (10 8 0.6 )
UNIT V V V mA mA mW
2N3904S
EPITAXIAL PLANAR NPN TRANSISTOR
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
Q K 0.00 ~ 0.10
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
C N K J
P7
Q 0.1 MAX
M
1. EMITTER 2. BASE 3. COLLECTOR
SOT-23
Marking
ZCType Name
Lot No.
2018. 07. 16
Revision No : 4
1/4
2N3904S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Base Cut-off Current Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage * Emitter-Base Breakdown
Voltage
DC Current Gain
*
Collector-Emitter Saturation
Voltage *
Base-Emitter Saturation
Voltage
Transition Frequency Collector Output Capacitan...
