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2N3771 Datasheet

Part Number 2N3771
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description HIGH POWER NPN SILICON TRANSISTOR
Datasheet 2N3771 Datasheet2N3771 Datasheet (PDF)

2N3771 ® 2N3772 HIGH POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCEO VCEV VCBO VEBO IC ICM IB IBM Ptot Tstg Collector-Emitter Voltage (IE = 0) Collector-Emitter Voltage (VBE = -1.5V) Collector-.

  2N3771   2N3771






Part Number 2N3771
Manufacturers Motorola
Logo Motorola
Description HIGH-POWER NPN SILICON TRANSISTORS
Datasheet 2N3771 Datasheet2N3771 Datasheet (PDF)

2N3771 (SILICON) 2N3772 MJ3771 M.J3772 HIGH-POWER NPN SILICON TRANSISTORS · . . designed for use in power amplifier and switching circuits applications. • High DC Current Gain - hFE = 15 (Min) @ IC = 15 Adc - 2N3771, MJ3771 15 (Min) @ IC = 10 Adc - 2N3772. MJ3772 • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 15 Adc - MJ3771 1.0 Vdc (Max) @ IC = 10 Adc - MJ3772 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40-60 VOLTS 150 WATTS *MAXIMUM RATINGS Rating Coliector~.

  2N3771   2N3771







Part Number 2N3771
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description High Power NPN Silicon Power Transistors
Datasheet 2N3771 Datasheet2N3771 Datasheet (PDF)

2N3771, 2N3772 High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features • Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (Note 1) Rating Collector−Emitter Voltage Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Curr.

  2N3771   2N3771







Part Number 2N3771
Manufacturers NTE
Logo NTE
Description Silicon NPN Transistor
Datasheet 2N3771 Datasheet2N3771 Datasheet (PDF)

2N3771 & 2N3772 Silicon NPN Transistor High Power Audio Amplifier TO−3 Type Package Description: The 2N3771 and 2N3772 are silicon epitaxial−base NPN transistors in a TO−3 type case intended for linear amplifiers and inductive switching applications Absolute Maximum Ratings: Collector−Emitter Voltage (IE = 0), VCEO 2N3771 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 2N3772 . . . . . . . . . . . . . ..

  2N3771   2N3771







Part Number 2N3771
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2N3771 Datasheet2N3771 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N3771 DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 15A ·Low Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC = 15A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEX.

  2N3771   2N3771







Part Number 2N3771
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description (2N3771 / 2N3772) NPN HIGH POWER SILICON TRANSISTOR
Datasheet 2N3771 Datasheet2N3771 Datasheet (PDF)

TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518 Devices www.DataSheet4U.com Qualified Level 2N3772 JANTX JANTXV 2N3771 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg 2N3771 40 50 7.0 7.5 30 2N3772 60 100 7.0 5.0 20 Unit Vdc Vdc Vdc Adc Adc W W 0 C @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temper.

  2N3771   2N3771







HIGH POWER NPN SILICON TRANSISTOR

2N3771 ® 2N3772 HIGH POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCEO VCEV VCBO VEBO IC ICM IB IBM Ptot Tstg Collector-Emitter Voltage (IE = 0) Collector-Emitter Voltage (VBE = -1.5V) Collector-Base Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc ≤ 25 oC Storage Temperature December 2000 Value 2N3771 2N3772 40 60 50 80 50 100 57 30 20 30 30 7.5 5 15 15 150 -65 to 200 Unit V V V V A A A A W oC 1/4 2N3771/2N3772 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.17 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEV Collector Cut-off for 2N3771 VCB = 50 V Current (VBE = -1.5V) for 2N3772 VCB = 100 V for all VCB = 30 V Tj = 150 oC ICEO Collector Cut-off Current (IB = 0) for 2N3771 VCB = 30 V for 2N3772 VCB = 50 V ICBO Collector Cut-off Current (IE = 0) for 2N3771 VCB = 50 V for 2N3772 VCB = 100 V IEBO Emitter Cut-off Current for 2N3771 VCB = 5 V (IC = 0) for 2N3772 VCB = 7 V VCEO(sus)∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 0.2 A for 2N3771 for 2N3772 VCEV(sus)∗.


2005-03-23 : 2N2857CSM    2N2880    2N2891    2N2894    2N2894    2N2894    2N2894A    2N2894ACSM    2N2894CSM    2N2894DCSM   


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