2N3741R

INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N3741R DESCRIPTION ·DC Current Gain- : hFE= 30-100@IC= -250mA ·Wide Area of Safe Operation ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6 V(Max)@ IC = -1A ·High Gain ·Low Saturation Voltage APPLICATIONS ·Designed for use as drivers, switches and medium-power amplifier and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO VEBO IC ICM IB PC Tstg Collector-Emitter Voltage -80 V Emitter-Base Voltage -7 V Collector Current-Continuous -4 A Collector Current-Peak -10 A Base Current -2 A Collector Power Dissipation@TC=25℃ 25 W Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 7.0 UNIT ℃/W isc website：www.iscsemi.com1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transis...