2N3700DCSM

LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N3700DCSM HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 1.40 ± 0.15 (0.055 ± 0.006) 0.64 ± 0.08 (0.025 ± 0.003) 2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR 4.32 ± 0.13 (0.170 ± 0.005) 2.54 ± 0.13 (0.10 ± 0.005) 2 1 3 4 5 HERMETIC CERAMIC SURFACE MOUNT PACKAGE CECC SCREENING OPTIONS SPACE QUALITY LEVELS OPTIONS HIGH VOLTAGE A 6 0.23 rad. (0.009) 1.27 ± 0.13 (0.05 ± 0.005) 6.22 ± 0.13 (0.245 ± 0.005) A= LCC2 PACKAGE Underside View PAD 1 – Collector 1 PAD 2 – Base 1 PAD 3 – Base 2 PAD 4 – Collector 2 PAD 5 – Emitter 2 PAD 6 – Emitter 1 APPLICATIONS: Dual Hermetically sealed surface mount version of the popular 2N3700 for high reliability/ space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD PD Rja Tstg Semelab plc. Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IB = 0) Collector Current Per Device Dissipation Total Device Dissipation Derate above 25°C (Per Device) (Total) Thermal Resistance Junction to Ambient Storage Temperature Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 2N3700 140V 80V 7V 1A 350mW 525mW 2mW / °C 3mW/°C 240°C/W –65 to 200°C Prelim. 2/98 LAB ELECTRICAL CHARACTERISTICS (per Dev...