2N3634

2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon Features MIL−PRF−19500/357 Qualified Available as JAN, JANTX, JANTXV and JANHC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol 2N3634/L 2N3636/L 2N3635/L 2N3637/L Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous VCEO VCBO VEBO IC −140 −175 −140 −175 −5.0 1.0 Vdc Vdc Vdc Adc Total Device Dissipation @ TA = 25°C Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range PT PT TJ, Tstg 1.0 5.0 −65 to +200 W W °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 175 °C/W Thermal Resistance, Junction to Case RqJC 35 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Level Device 2N3634 2N3635 JAN JANTX JANTXV JANHC 2N3636 2N3637 2N3634L 2N3635L 2N3636L 2N3637L Package TO−39 TO−5 Shipping Bulk Bulk © Semiconductor Components Industries, LLC, 2013 November, 2013 − Rev. 1 1 http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER TO−5 CASE 205AA STYLE 1 2N3634L 2N3635L 2N3636L 2N3637L TO−39 CASE 205AB STYLE 1 2N3634 2N3635 2N3636 2N3637 Publication Order Number: 2N3637/D 2N3634, 2N3634L, 2N3635, 2N3635...