DatasheetsPDF.com

2N3585 Datasheet

Part Number 2N3585
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description SILICON NPN TRANSISTORS
Datasheet 2N3585 Datasheet2N3585 Datasheet (PDF)

2N3583 2N3584 2N3585 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 series devices are silicon NPN transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage J.

  2N3585   2N3585






Part Number 2N3585
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description 5 Amp/ 500V/ High Voltage NPN Silicon Power Transistors
Datasheet 2N3585 Datasheet2N3585 Datasheet (PDF)

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3585 APPLICATIONS: • • • Off-Line Inverters Switching Regulators Motor Controls • • • Deflection Circuits DC-DC Converters High Voltage Amplifiers FEATURES: • • • High Voltage: 250 to 500V Fast Switching: tf < 3µ sec. High Power: 35 Watts • • High Current: 2 Amps Low VCE (SAT) 5 Amp, 500V, High Voltage NPN Silicon Power Transistors DESCRIPTION: These power transistors are produced by.

  2N3585   2N3585







Part Number 2N3585
Manufacturers NTE
Logo NTE
Description Silicon NPN Transistors
Datasheet 2N3585 Datasheet2N3585 Datasheet (PDF)

2N3583, 2N3584, 2N3585 Silicon NPN Transistors High Voltage, Medium Power Switch TO66 Type Package Description: The 2N3583, 2N3584, and 2N3585 are silicon transistors in a TO66 type package designed for high− speed switching and linear amplifier applications for high−voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Features: D TO66 Type Package D Continuous Collector Current: IC = 2A D Power Dissipation: PD = 35W @ TC.

  2N3585   2N3585







Part Number 2N3585
Manufacturers SavantIC
Logo SavantIC
Description Silicon NPN Power Transistors
Datasheet 2N3585 Datasheet2N3585 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N3585 DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=2A ·Power dissipation -PD=35W @TC=25 ·VCE(SAT)=0.75V(Max)@IC=1A;IB=0.125A APPLICATIONS ·High speed switching and linear amplification ·High-voltage operational amplifiers ·Switching regulators ,converters ·Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline.

  2N3585   2N3585







Part Number 2N3585
Manufacturers Comset Semiconductor
Logo Comset Semiconductor
Description NPN SILICON POWER TRANSISTORS
Datasheet 2N3585 Datasheet2N3585 Datasheet (PDF)

NPN 2N3583 – 2N3584 – 2N3585 NPN SILICON POWER TRANSISTORS. The 2N3583 2N3584 2N3585 are mounted in Jedec TO-66 metal case. They are designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Ratings Collector-Base Voltage (IE= 0) www.DataSheet.net/ Value 2N3583 2N3584 2N3585 2N3583 2N3584 2N3585 2N3583 2N3.

  2N3585   2N3585







Part Number 2N3585
Manufacturers Mospec Semiconductor
Logo Mospec Semiconductor
Description POWER TRANSISTORS
Datasheet 2N3585 Datasheet2N3585 Datasheet (PDF)

A A A A .

  2N3585   2N3585







SILICON NPN TRANSISTORS

2N3583 2N3584 2N3585 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 series devices are silicon NPN transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N3583 250 175 6.0 1.0 2N3584 375 250 6.0 2.0 5.0 1.0 35 -65 to +200 5.0 2N3585 500 300 6.0 2.0 UNITS V V V A A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N3583 2N3584 SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICEV VCE=225V, VEB=1.5V - 1.0 -- ICEV VCE=340V, VEB=1.5V -- - 1.0 ICEV VCE=450V, VEB=1.5V -- -- ICEV VCE=225V, VEB=1.5V, TC=150°C - 3.0 -- IC.


2019-06-24 : 401CNQ040    401CNQ035    D40K2    2N3583    S2SC4617G    2N3583    2N3584    2N3585    SK320A    401CNQ045   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)