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2N3055E Datasheet

Part Number 2N3055E
Manufacturers Semelab Plc
Logo Semelab Plc
Description Bipolar NPN Device
Datasheet 2N3055E Datasheet2N3055E Datasheet (PDF)

( DataSheet : www.DataSheet4U.com ) 2N3055E Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 60V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 15A All Semelab hermetic.

  2N3055E   2N3055E






Part Number 2N3055HV
Manufacturers TRANSYS Electronics Limited
Logo TRANSYS Electronics Limited
Description NPN POWER TRANSISTOR
Datasheet 2N3055E Datasheet2N3055HV Datasheet (PDF)

Transys Electronics L I M I T E D www.DataSheet4U.com NPN POWER TRANSISTOR 2N3055HV TO-3 Metal Can Package Switching Regulator and Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage ( Open Emitter) Collector Emitter Voltage (Open Base) Emitter Base Voltage Collector Current Base Current Total Power Dissipation up toTc=25ºC Junction Temperature Storage Temperature THERMAL RESISTANCE Junction to Case Rth(j-c) 1.75 ºC/W SYMBOL VCBO VCEO VEBO IC IB Ptot Tj T.

  2N3055E   2N3055E







Part Number 2N3055HV
Manufacturers CDIL
Logo CDIL
Description NPN Power Transistor
Datasheet 2N3055E Datasheet2N3055HV Datasheet (PDF)

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L-000019.3 NPN POWER TRANSISTOR 2N3055HV TO-3 Metal Can Package Switching Regulator and Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage ( Open Emitter) Collector Emitter Voltage (Open Base) Emitter Base Voltage Collector Current Base Current Total Power Dissipation up toTc=25ºC Junction Temperature Storage Temperature THERMAL RESISTANCE Junction to Cas.

  2N3055E   2N3055E







Part Number 2N3055H
Manufacturers Seme LAB
Logo Seme LAB
Description Power Transistor
Datasheet 2N3055E Datasheet2N3055H Datasheet (PDF)

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  2N3055E   2N3055E







Part Number 2N3055H
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet 2N3055E Datasheet2N3055H Datasheet (PDF)

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3055H DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS ·Designed for general-purpose switching and amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 70 V VCEO Collector-Emitter Voltage 10.

  2N3055E   2N3055E







Part Number 2N3055H
Manufacturers USHA
Logo USHA
Description Silicon Power Transistor
Datasheet 2N3055E Datasheet2N3055H Datasheet (PDF)

Silicon Power Transistor 2N3055H Technical Data Typical Applications : These devices are designed for general purpose switching and amplifier applications. Specification Fetaures : F Complementary NPN Silicon Power Transistor F 15 Amp / 100 V device in TO-204AA [ TO-3 ] package F 115 Watts device F Excellent safe operating area Symbol Parameters / Conditions Ratings Maximum Ratings : V CEO Collector- Emitter Voltage V CER V CB V EB IC IB Collector- Emitter Voltage Collector - Base Volt.

  2N3055E   2N3055E







Bipolar NPN Device

( DataSheet : www.DataSheet4U.com ) 2N3055E Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 60V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 15A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 60 15 Units V A Hz @ 4/4 (VCE / IC) 20 2.5M 70 115 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact [email protected]. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Generated 31-Jul-02 www.DataSheet4U.com www.DataSheet4U.com .


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