2N2412

DATA SHEET 2N2411 2N2412 PNP SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2411, 2N2412 types are PNP Saturated Switching Transistors designed for high speed switching applications. MAXIMUM RATINGS: SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance VCBO VCEO VEBO IC PD PD TJ,Tstg ΘJA ΘJC 25 15 5.0 100 0.5 1.2 -65 to +200 350 146 UNITS V V V mA W W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: SYMBOL ICES ICES IEBO BVCBO BVCEO VCE(SAT) VBE(SAT) hFE hFE hFE hFE hfe Cob Cib TEST CONDITIONS VCE=15V VCE=15V, TA=150°C VEB=5.0V IC=10µA IC=10mA IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=0.5V, IC=50µA VCE=0.5V, IC=10mA VCE=0.5V, IC=10mA, TA=-55°C VCE=1.0V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=5.0V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz 2N2411 MIN MAX 10 10 25 15 0.7 10 20 10 1.4 5.0 8.0 0.2 0.9 60 10 2N2412 MIN MAX 10 10 10 25 15 0.7 20 40 20 1.4 5.0 8.0 0.2 0.9 120 20 UNITS nA µA µA V V V V pF pF (CONTINUED ON REVERSE SIDE) R0 2N2411 / 2N2412 ELECTRICAL CHARACTERISTICS (Continued) SYMBOL td tr ton ts tf toff PNP SILICON TRANSISTOR TEST CONDITIONS VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300Ω VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300Ω VBE(off)=1.2V, IC=10mA, IB1=2.5mA, RL=300Ω IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300Ω IC=10mA, IB1=2.5mA, IB2=2.0mA, RL=300Ω IC=10mA, IB1=2.5mA, IB2=2...