2N2242 (SILICON)
CASE 22
(TO·1S)
NPN silicon annular transistors designed for highspeed, low-power saturated switching...
2N2242 (SILICON)
CASE 22
(TO·1S)
NPN silicon annular transistors designed for highspeed, low-power saturated switching applications.
MAXIMUM RATINGS
Rating
Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage Collector Current - Continuous
Total Device Dissipation @' TA -= 25° C
Derate above 25° C Junction Temperature - Operating Storage Temperature Range
FIGURE 1 - SWITCHING TIME TEST CIRCUIT
5.0k
5.0 k
Symbol
Value
Unit
VCEO VCB VEB IC PD
T.T Tstg
15 40 5.0 225 360 2.0 -65 to +200 -65 to +200
+ 3.0 v (Vee)
Vdc
Vdc
Vdc
mAdc
mWatts mW/oC
°c °c
30
;
-
240 -.JV\
I'
v--
.
0.1 I1_F
_....u----1..---O
seOPE
z ~ 100 k
PULSE WIDTH 96 ns 51
PRR 120 Hz
t ...Q!!.
VBB = -4.0 V V in = +21 V
V BB = +17 V Vin = -20 V
+11 V
FIGURE 2 - STORAGE TIME TEST CIRCUIT
500 O. 1 JlF 500
-IOU 62
PULSE WIDTH 96 ns
PRR 120 Hz
1.0k
+10 V 91
,...8.9-0v~-.....~O.~1-J~lF-oseOPE
z ~ 100 k
1.0k
2-264
2N2242 (continued)
ELECTRICAL CHARACTERISTICS (1, = 25'C unl.ss ot...
