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Manufacture Part Number Description Mobile PC
American Microsemiconductor
American Microsemiconductor
2N2222A Diode

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SGS-THOMSON
SGS-THOMSON
2N2222A HIGH SPEED SWITCHES
2N2218A-2N2219A 2N2221A-2N2222A
HIGH SPEED SWITCHES
DESCRIPTION The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218A and 2N2219A) and in Jedec TO-18 (for 2N2221A and 2N2222A) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 2N2218A/2N2219A approved to CECC 50002-100, 2N2221A/2N2222A approved to CECC 50002-101 available on request.
TO-39 TO-18

INTERNA L SCHE
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Central
Central
2N2222A NPN SILICON TRANSISTOR

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Diotec
Diotec
2N2222A General purpose Si-Epitaxial PlanarTransistors
PN2222A / 2N2222A

PN2222A / 2N2222A

NPN

General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz

Version 2005-11-17

Power dissipation Verlustleistung

E BC

Plastic case Kunststoffgehäuse

16 9 18

Weight approx. – Gewicht ca.

2 x 2.54
Dimensions / Maße [mm]

Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack

NPN
625 mW TO-92 (10D3) 0.18 g

Maximum ratings (TA = 25°C)

Collector-Emitter-volt. - Kollektor-Emitter-Spannung E
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ON Semiconductor
ON Semiconductor
2N2222A Small Signal Switching Transistor
2N2222A
Small Signal Switching Transistor
NPN Silicon
Features
• MIL−PRF−19500/255 Qualified • Available as JAN, JANTX, and JANTXV

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Characteristic

Symbol Value

Unit

Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous Total Device Dissipation @ TA = 25°C Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range

VCEO VCBO VEBO
IC PT PT TJ, Tstg

50 75 6.0 800 500 1.0 −65 to +200

Vdc Vdc Vdc mAdc mW W °C

THERMAL CHARACTERISTICS

Characteri
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MCC
MCC
2N2222A NPN Switching Transistors
MCC TM
Micro Commercial Components

	
omponents 20736 Marilla Street Chatsworth  	 !"# $
%    !"#

Features
• High current (max.800mA)
• Low voltage (max.40V) • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)

Maximum Ratings

Symbol

Rating

VCEO

Collector-Emitter Voltage

2N2222

2N2222A

VCBO

Collector-Base Voltage

2N2222

2N2222A

VEBO

Emitter-Base Voltage

2N2222

2N2222A

IC Collector Current (DC) ICM Peak Collector Current

IBM Peak Base Current

TJ Operating Junction
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Seme LAB
Seme LAB
2N2222A HIGH SPEED MEDIUM POWER / NPN SWITCHING TRANSISTOR
LAB
MECHANICAL DATA Dimensions in mm (inches)
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)

SEME

2N2222A

HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR
5.33 (0.210) 4.32 (0.170)

FEATURES
• SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HIGH SPEED SATURATED SWITCHING • ALSO AVAILABLE IN CERAMIC SURFACE MOUNT PACKAGE

0.48 (0.019) 0.41 (0.016) dia.

2.54 (0.100) Nom.

3 2

1

TO–18 METAL PACKAGE
Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO VCEO VEBO IC PD PD TJ , TSTG Collector – Base Vol
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Semicoa
Semicoa
2N2222A Type 2N2222A Geometry 0400 Polarity NPN
Data Sheet No. 2N2222A

Type 2N2222A
Geometry 0400 Polarity NPN Qual Level: JAN - JANS
Features: • • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in TO-18 case. Also available in chip form using the 0400 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/255 which Semicoa meets in all cases. The Typ values are actual batch averages for Semicoa. Radiation Graphs available.

Generic Part Number: 2N2222A

REF: MIL-PRF-19500/255

TO-18

Maximum Ratings
TC = 25oC unless otherwise specified

Rating
Collector-Emitter Voltage Collector-B
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Microsemi
Microsemi
2N2222A NPN SILICON SWITCHING TRANSISTOR
TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255 Devices 2N2221A 2N2221AL 2N2221AUA 2N2221AUB Qualified Level JAN JANTX JANTXV JANS JANHC

2N2222A 2N2222AL 2N2222AUA 2N2222AUB

MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C 2N2221A, L; 2N2222A, L (1) 2N2221AUA; 2N2222AUA (2) 2N2221AUB; 2N2222AUB (1) Operating & Storage Junction Temperature Range

Symbol
VCEO VCBO VEBO IC PT Top, Tstg Symbol RθJA

All Types
50 75 6.0 800 0.5 0.65 0.50 -65 to +200 Max. 325 210 325
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Philips
Philips
2N2222A NPN switching transistors
DISCRETE SEMICONDUCTORS

DATA SHEET

M3D125

2N2222; 2N2222A NPN switching transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 29

Philips Semiconductors

Product specification

NPN switching transistors
FEATURES • High current (max. 800 mA) • Low voltage (max. 40 V). APPLICATIONS • Linear amplification and switching. DESCRIPTION NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A.
3

2N2222; 2N2222A
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION

handbook, halfpage 1

3 2

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