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Manufacture Part Number Description Mobile PC
CDIL
CDIL
2N2222 NPN SILICON PLANAR SWITCHING TRANSISTORS
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

NPN SILICON PLANAR SWITCHING TRANSISTORS

2N2221 2N2222 TO-18 Metal Can Package

Switching and Linear Application DC and VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL 2N2221, 22 VCEO Collector Emitter Voltage 30 VCBO Collector Base Voltage 60 Emitter Base Voltage Collector Current Continuous Power Dissipation @Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range VEBO IC 
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Seme LAB
Seme LAB
2N2222 Bipolar NPN Device
2N2222

Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209)
4.95 (0.195) 4.52 (0.178)

Bipolar NPN Device in a Hermetically sealed TO18
Metal Package.

0.48 (0.019) 0.41 (0.016)
dia.
2.54 (0.100) Nom.

31 2

1 – Emitter

TO18 (TO206AA) PINOUTS

2 – Base

3 – Collector

Bipolar NPN Device.
VCEO = 30V
IC = 0.8A
All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications

Parameter VCEO* IC(CONT) hFE ft PD

Test Conditions @ 10/0.15 (VCE / IC)

* Maximum Working Voltage

Min. 100

Typ. 250M

Max. 3
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MCC
MCC
2N2222 NPN Switching Transistors
MCC TM
Micro Commercial Components

	
omponents 20736 Marilla Street Chatsworth  	 !"# $
%    !"#

Features
• High current (max.800mA)
• Low voltage (max.40V) • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)

Maximum Ratings

Symbol

Rating

VCEO

Collector-Emitter Voltage

2N2222

2N2222A

VCBO

Collector-Base Voltage

2N2222

2N2222A

VEBO

Emitter-Base Voltage

2N2222

2N2222A

IC Collector Current (DC) ICM Peak Collector Current

IBM Peak Base Current

TJ Operating Junction
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Inchange Semiconductor
Inchange Semiconductor
2N2222 Silicon NPN Power Transistor
INCHANGE Semiconductor
isc Silicon NPN Power Transistor

DESCRIPTION ·Collector Current- IC= 0.8A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 30V(Min) ·Complement to Type 2N2907

APPLICATIONS ·Designed for general-purpose switching and linear
amplification.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VCBO

Collector-Base Voltage

VCEO VEBO

Collector-Emitter Voltage Emitter-Base Voltage

IC Collector Current-Continuous

IBM Base Current-Peak PC Collector Power Dissipation@TC=25℃

TJ Junction Temperature

Tstg Storage Temperature

THERMAL CHARACTERISTICS
SYMBOL

PARAMETE
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Philips
Philips
2N2222 NPN switching transistors
DISCRETE SEMICONDUCTORS

DATA SHEET

M3D125

2N2222; 2N2222A NPN switching transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 29

Philips Semiconductors

Product specification

NPN switching transistors
FEATURES • High current (max. 800 mA) • Low voltage (max. 40 V). APPLICATIONS • Linear amplification and switching. DESCRIPTION NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A.
3

2N2222; 2N2222A
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION

handbook, halfpage 1

3 2

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Micro Electronics
Micro Electronics
2N2222 NPN SILICON PLANAR EPITAXIAL TRANSISTORS

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STMicroelectronics
STMicroelectronics
2N2222 HIGH-SPEED SWITCHES
2N2218-2N2219 2N2221-2N2222
HIGH-SPEED SWITCHES
DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 2N2218/2N2219 approved to CECC 50002100, 2N2221/2N2222 approved to CECC 50002-101 available on request.
TO-39

TO-18

INTERNAL SCHEMATIC DIAGRAM

AB
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Siemens Group
Siemens Group
2N2222 NPN Silicon Planar Transistors

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Semicoa
Semicoa
2N2222 Chip Type 2C2222A Geometry 0400 Polarity NPN
Data Sheet No. 2C2222A

Chip Type 2C2222A Geometry 0400 Polarity NPN

Generic Packaged Parts: 2N2219, 2N2219A, 2N2222, 2N2222A

Chip type 2C2222A by Semicoa Semiconductors provides performance similar to these devices.
Part Numbers:
2N2222A, 2N2222, 2N2219, 2N2219A, 2N2219AL, 2N2222AUB, SD2222A, SD2222AF, SQ2222A, SQ2222AF, 2N5582, 2N6989, 2N6990

Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. Features: Medium power ratings

Mechanical Specifications
Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base A
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Comset Semiconductor
Comset Semiconductor
2N2222 (2N222x/A) Switching Silicon Transistors
NPN 2N2221 – 2N2221A 2N2222 – 2N2222A

SWITCHING SILICON TRANSISTORS
The 2N2221-A and 2N2222-A are NPN transistors mounted in TO-18 metal case . They are designed for high-speed switching applications and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS

ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings
www.DataSheet.net/

2N2221 2N2222
30 60 5

2N2221A 2N2222A
40 75 6 800

Unit

VCEO VCBO VEBO IC PD

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Tamb = 25° Total P
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