OptiMOS® Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C pea...
OptiMOS® Power-Transistor
Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested
IPB80N06S2-H5 IPP80N06S2-H5
Product Summary V DS R DS(on),max (SMD version) ID
55 V 5.2 mΩ 80 A
PG-TO263-3-2
PG-TO220-3-1
Type IPB80N06S2-H5 IPP80N06S2-H5
Package
Ordering Code Marking
PG-TO263-3-2 SP0002-18162 2N06H5
PG-TO220-3-1 SP0002-18155 2N06H5
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D= 80 A
Gate source
voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80
80
320 700 ±20 300 -55 ... +175 55/175/56
Unit A
mJ V W °C
...
