20N60BD1

HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE(sat)typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 40 20 80 ICM = 40 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °C g g TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C E C = Collector, TAB = Collector C (TAB) G = Gate, E = Emitter, Features International standard packages High frequency IGBT and antiparallel FRED in one package High current handling capability HiPerFASTTM HDMOSTM process MOS Gate turn-on -drive simplicity Applications Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages Space savings (two devices in one package) High power density Suitable for surface mounting Very low switching losses for high frequency applications Easy to mount with 1 screw,TO-247 (insulated mounting screw hole) Mounting torque (M3) TO-247AD 1.13/10 Nm/lb.in. 300 6 4 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247AD TO-268 Symbol Test Conditions Characteristic Values (TJ = 25°C, unle...