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1SS405 Datasheet

Part Number 1SS405
Manufacturers Toshiba
Logo Toshiba
Description Schottky Barrier Diode
Datasheet 1SS405 Datasheet1SS405 Datasheet (PDF)

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS405 High Speed Switching Application 1SS405 Unit: mm z Low forward voltage z Low reverse current z Small total capacitance : VF (3) = 0.50V (typ.) : IR= 0.5μA (max) : CT = 3.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 100 mA Average forward current IO 50 mA Surge current (10ms) IFSM 1A .

  1SS405   1SS405






Part Number 1SS406
Manufacturers Toshiba
Logo Toshiba
Description Schottky Barrier Diode
Datasheet 1SS405 Datasheet1SS406 Datasheet (PDF)

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS406 High Speed Switching Application 1SS406 Unit: mm z Low forward voltage z Low reverse current z Small total capacitance : VF (3) = 0.50V (typ.) : IR= 0.5μA (max) : CT = 3.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 100 mA Average forward current Surge current (10ms) Power dissipation IO.

  1SS405   1SS405







Part Number 1SS404
Manufacturers MCC
Logo MCC
Description High Speed Switching Diode
Datasheet 1SS405 Datasheet1SS404 Datasheet (PDF)

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS404 Features • Halogen free available upon request by adding suffix "-HF" • High speed switching diode • Surface Mount • Fast Reverse Recovery Time: IR=50uA(max.) • Small Total Capacitance: CT=46pF(typ.) • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Mechanical Data • Marking: S51 • Polar.

  1SS405   1SS405







Part Number 1SS404
Manufacturers MDD
Logo MDD
Description Silicon Epitaxial Planar Diode
Datasheet 1SS405 Datasheet1SS404 Datasheet (PDF)

1SS404 Silicon Epitaxial Planar Diode FEATURES z Small surface mounting type. z High speed. z High reliability with high surge current handing capability Pb Lead-free APPLICATIONS z High speed switching ORDERING INFORMATION SOD-323 Type No. Marking Package Code 1SS404 S51 SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Peak reverse voltage VRM 25 DC Reverse Voltage VR 20 Peak forward Current IFM 700 Average Rectified Output Current IO 30.

  1SS405   1SS405







Part Number 1SS404
Manufacturers WON-TOP
Logo WON-TOP
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE
Datasheet 1SS405 Datasheet1SS404 Datasheet (PDF)

® WON-TOP ELECTRONICS 1SS404 SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Turn-On Voltage  Fast Switching Speed  PN Junction Guard Ring for Transient and ESD Protection  For General Purpose Switching Applications  Plastic Material – UL Recognition Flammability Classification 94V-0 C A B Mechanical Data  Case: SOD-323, Molded Plastic  Terminals: Plated Leads Solderable per MIL-STD-202, Method 208  Polarity: Cathode Band  Weight: 0.004 grams (approx.)  Marking: S51  Lead F.

  1SS405   1SS405







Schottky Barrier Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS405 High Speed Switching Application 1SS405 Unit: mm z Low forward voltage z Low reverse current z Small total capacitance : VF (3) = 0.50V (typ.) : IR= 0.5μA (max) : CT = 3.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 100 mA Average forward current IO 50 mA Surge current (10ms) IFSM 1A Power dissipation P * 150 mW Junction temperature Storage temperature range Tj 125 °C JEDEC JEITA Tstg −55 to 125 °C TOSHIBA ― ― 1-1G1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.4mg(Typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on a glass epoxy circuit board of 20 × 20 mm, pad dimension of 4 × 4 mm. Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) VF (3) IR CT Tes.


2016-08-01 : ZKB465-501-80    T60404-A4655-X001    74LS256    74LS256    54LS256    54LS256    74LS256    SN74LS256    A44    A44   


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