Silicon diode
Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS384
Low Voltage High Speed Switching
z Small package z Composed of 2 independent diodes. z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
1SS384
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) for...
Toshiba Semiconductor
1SS384 PDF File
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