RoHS
1SS190 SWITCHING DIODE
SOT-23 Plastic-Encapsulate DIODE
DFeatures TPower dissipation
PD : 150 mW (Tamb=25oC)
.,L...
RoHS
1SS190 SWITCHING DIODE
SOT-23 Plastic-Encapsulate DIODE
DFeatures TPower dissipation
PD : 150 mW (Tamb=25oC)
.,LForward Current IF : 100 mA Reverse
Voltage
VR : 80V
OOperating and storage junction temperature range Tj, Tstg : -55 oC to +150 oC
1
1.
2.4 1.3
SOT-23
3
2
ONIC CMarking:E3
2.9 1.9 0.95 0.95 0.4
Unit:mm
TRELECTRICAL CHARACTERISTICS o
C(Ta=25 C unless otherwise specified)
Parameter
Symbol
EReverse breakdown
voltage
V(BR)
LReverse
Voltage leakage current
IR
EForward
Voltage JDiode Capacitance WEReverse Recovery Time
VF Ctot trr
Test Condition
IR=100 A
VR=80V
IF=100mA
VR=0V f=1MHz IF=IR=10mA Irr=0.1IR
MIN. MAX. Unit
80 V 0.5 A 1.2 V 4 pF 4 nS
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:
[email protected]
RoHS
1SS190
FORWARD CURRENT IF(A)
Typical Characteristics TDIF - VF .,L1
REVERSE CURRENT IR(A)
100m
O10m C1m
TA=100 C
25 C
-25 C
100
IC10 0
0.2 0.4 0.6 0.8 1.0
FORWARD
VOLTAGE VF(V)
1.2
TRONCr - VR
2.5
f=1MHz
CTa=25 C
2.0
REVERSE RECOVERY TIME trr(ns)
TOTAL CAPACITANCE CT (pF)
E1.5
L1.0
E0.5
J0 WE0.3
13
10 30
REVERSE
VOLTAGE VR (V)
100
IR - VR
10
TA=100 C
1
75 C
100n
50 C
10n
25 C
1n 0 20 40 60 80
REVERSE NOLTAGE VR(V)
trr - IF
100
Ta=25 C 50 Fig.1
30
10
5 3
1
0.5 0.1
0.3 1 3
10 30
FORWARD CURRENT IF(mA)
100
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:
[email protected]
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