DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
1PS79SB62 Schottky barrier diode
Product specification 2001 Jan 18
Philips ...
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
1PS79SB62 Schottky barrier diode
Product specification 2001 Jan 18
Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES Ultra high switching speed Very low capacitance High breakdown
voltage Guard ring protected Ultra small plastic SMD package. APPLICATIONS Ultra high-speed switching High frequency applications. DESCRIPTION Epitaxial Schottky barrier diode encapsulated in a SOD523 (SC-79) ultra small plastic SMD package. ESD sensitive device, observe handling precautions. PINNING
1PS79SB62
handbook, halfpage 1 k
Marking code: S9.
Fig.1
1 2
Top view
PIN
DESCRIPTION cathode anode
2 a
MAM403
Simplified outline (SOD523; SC-79) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF Tstg Tj Tamb continuous reverse
voltage continuous forward current storage temperature junction temperature operating ambient temperature PARAMETER − − −65 − −65 MIN. MAX. 40 20 +150 125 +125 V mA °C °C °C UNIT
2001 Jan 18
2
Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF IR Cd Note 1. Pulse test: pulse width = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD523 (SC-79) standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS forward
voltage reverse current diode capacitance PARAMET...