1N831

SILICON MIXER DIODE 1N831 DESCRIPTION: The ASI 1N831 is a Silicon Mixer Diode Designed for Applications Operating From 2.0 to 4.0 GHz. FEATURES: High burnout resistance Low noise figure Hermetically sealed package MAXIMUM RATINGS IF 20 mA VR 1.0 V PDISS 2.0 (ERGS) @ TC = 25 °C TJ -55 °C to +150 °C TSTG -55 °C to +150 °C PACKAGE STYLE DO- 7 NONE CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS NF f = 3060 MHz PLO = 1.0 mW NFif = 1.5 dB RL = 100 Ω IF = 30 MHz NR f = 3060 MHz PLO = 1.0 mW NFif = 1.5 dB RL = 100 Ω IF = 30 MHz LC f = 3060 MHz PLO = 0.5 mW Z IF RL = 22 Ω f = 1000 Hz frange MINIMUM TYPICAL 300 2.0 MAXIM 8.3 1.5 5.5 500 4.0 UNITS dB --- dB Ω GHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...