1N65

UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) <12.5Ω @ VGS=10V, ID=0.6A * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL 1 SOT-223 1 TO-92 11 TO-220 TO-220F 1 TO-251 1 TO-251L 1 TO-252 1 1 TO-126 DFN5060-8 www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-579.F 1N65 Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 1N65L-AA3-R 1N65G-AA3-R SOT-223 1N65L-TA3-T 1N65G-TA3-T TO-220 1N65L-TF3-T 1N65G-TF3-T TO-220F 1N65L-TM3-T 1N65G-TM3-T TO-251 1N65L-TMA-T 1N65G-TMA-T TO-251L 1N65L-TN3-R 1N65G-TN3-R TO-252 1N65L-T60-K 1N65G-T60-K TO-126 1N65L-T92-B 1N65G-T92-B TO-92 1N65L-T92-K 1N65G-T92-K TO-92 1N65L-K08-5060-R 1N65G-K08-5060-R DFN5060-8 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12345678 GDS - - - - GDS - - - - GDS - - - - GDS - - - - GDS - - -...