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1N50

Unisonic Technologies

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 1N50 Preliminary 1.3A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N50 is a N-...


Unisonic Technologies

1N50

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Description
UNISONIC TECHNOLOGIES CO., LTD 1N50 Preliminary 1.3A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N50 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 1N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.  FEATURES * RDS(ON)=6.0Ω @ VGS=10V * High Switching Speed * 100% Avalanche Tested Power MOSFET 1 TO-220 1 TO-220F1 1 TO-92  SYMBOL  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 1N50L-TA3-T 1N50G-TA3-T 1N50L-TF1-T 1N50G-TF1-T 1N50L-92-B 1N50G-T92-B 1N50L-92-K 1N50G-T92-K Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-92 TO-92 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tape Box Bulk www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-548.d 1N50  MARKING TO-220 / TO-220F1 Preliminary Power MOSFET TO-92 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-548.d 1N50 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30...




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