1N4099 THRU 1N4135
SILICON ZENER DIODE LOW NOISE
6.8 VOLT THRU 100 VOLT 250mW, 5% TOLERANCE
w w w. c e n t r a l s e m ...
1N4099 THRU 1N4135
SILICON ZENER DIODE LOW NOISE
6.8 VOLT THRU 100 VOLT 250mW, 5% TOLERANCE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N4099 series silicon Zener diode is designed for low leakage, low current, and low noise applications.
MARKING: Devices shall either be marked with the prefix ‘C’ followed by the full part number or by the marking code in the Electrical Characteristics Table.
DO-35 CASE
MAXIMUM RATINGS: (TA=25°C) Power Dissipation
Operating and Storage Junction Temperature
SYMBOL PD
TJ, Tstg
250 -65 to +200
UNITS mW °C
ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.1V MAX @ IF=200mA (for all types)
TYPE
ZENER
VOLTAGE VZ @ IZT MIN NOM MAX
TEST CURRENT
IZT
MAXIMUM ZENER
IMPEDANCE
ZZT @ IZT
MAXIMUM REVERSE CURRENT
IR @ VR
MAXIMUM ZENER
CURRENT
IZM
MAXIMUM NOISE
DENSITY
ND @ 250μA
V
V
V
μA
Ω
μA
V
mA
μV/ Hz
1N4099 6.460 6.8 7.140
250
200
10
5.2
35.0
40
1N4100 7.125 7.5 7.875
250
200
10
5.7
31.8
40
1N4101 7.790 8.2 8.610
250
200
1.0 6.3
29.0
40
1N4102 8.265 8.7 9.135
250
200
1.0 6.7
27.4
40
1N4103 8.645 9.1 9.555
250
200
1.0 7.0
26.2
40
1N4104 9.50 10 10.50
250
200
1.0 7.6
24.8
40
1N4105 10.45 11 11.55
250
200
0.05 8.5
21.6
40
1N4106 11.40 12 12.60
250
200
0.05 9.2
20.4
40
1N4107 12.35 13 13.65
250
200
0.05 9.9
19.0
40
1N4108 13.30 14 14.70
250
200
0.05 10.7
17.5
40
1N4109 14.25 15 15.75
250
100
0.05 11.4
16.3
40
1N4110 15.20 16 16.80
250
100
0...