1N40 Datasheet
Part Number |
1N40 |
Manufacturers |
Unisonic Technologies |
Logo |
|
Description |
N-Channel Power MOSFET |
Datasheet |
1N40 Datasheet (PDF) |
1N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
1A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 1N40 is universally applied in electronic lamp ballast based on half bridge topology and high efficient switched mode power supply.
FEATURES
* High switching speed * RDS(ON)=6.8Ω @ VGS=10V * 100% avalanche tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
- 1N40G-AA3-R
1N40L-TA3-T
1N40G-TA3-T
1N40L-T92-B
1N40G-T92-B
1N40L-T92-K
1N40G-T92-K
Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-223 TO-220 TO-92 TO-92
Pin Assignment 123 GDS GDS GDS GDS
Packing
Tape Reel T.
Part Number |
1N4999 |
Manufacturers |
Motorola |
Logo |
|
Description |
Silicon high-conductance rectifier |
Datasheet |
1N4999 Datasheet (PDF) |
lN4719 thru lN4725 (SILICON) lN4997 thru 1N5003
MR1030 thru MR1036, MR1038, MR1040
CASE 60
IN4719 THRU IN4725 MRI030A THRU MRI040A
CASE 70
IN4997 thru IN5003 MRI030B THRU MRI040B
Silicon high-conductance rectifiers available in either axial-lead or single-ended packages. Type numbers shown have cathode connected to case. For anodeto-case connection, add suffix "R" to type number, i. e. IN4719R
MAXIMUM RATINGS (Both Package Types) TA = 25°C unless otherwise noted
Rating
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
IN IN IN
IN IN IN IN
Symbol
4719 .4720 4721
MR MR MR
MR
4722
4723 4724 4725
MR MR MR MR MR
1030 1031 1032 1033 1034 1035 1036 1038 1.
Part Number |
1N4999 |
Manufacturers |
Microsemi Corporation |
Logo |
|
Description |
Silicon Rectifiers |
Datasheet |
1N4999 Datasheet (PDF) |
.
Part Number |
1N4998 |
Manufacturers |
Motorola |
Logo |
|
Description |
Silicon high-conductance rectifier |
Datasheet |
1N4998 Datasheet (PDF) |
lN4719 thru lN4725 (SILICON) lN4997 thru 1N5003
MR1030 thru MR1036, MR1038, MR1040
CASE 60
IN4719 THRU IN4725 MRI030A THRU MRI040A
CASE 70
IN4997 thru IN5003 MRI030B THRU MRI040B
Silicon high-conductance rectifiers available in either axial-lead or single-ended packages. Type numbers shown have cathode connected to case. For anodeto-case connection, add suffix "R" to type number, i. e. IN4719R
MAXIMUM RATINGS (Both Package Types) TA = 25°C unless otherwise noted
Rating
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
IN IN IN
IN IN IN IN
Symbol
4719 .4720 4721
MR MR MR
MR
4722
4723 4724 4725
MR MR MR MR MR
1030 1031 1032 1033 1034 1035 1036 1038 1.
Part Number |
1N4998 |
Manufacturers |
Microsemi Corporation |
Logo |
|
Description |
Silicon Rectifiers |
Datasheet |
1N4998 Datasheet (PDF) |
.
Part Number |
1N4997 |
Manufacturers |
Motorola |
Logo |
|
Description |
Silicon high-conductance rectifier |
Datasheet |
1N4997 Datasheet (PDF) |
lN4719 thru lN4725 (SILICON) lN4997 thru 1N5003
MR1030 thru MR1036, MR1038, MR1040
CASE 60
IN4719 THRU IN4725 MRI030A THRU MRI040A
CASE 70
IN4997 thru IN5003 MRI030B THRU MRI040B
Silicon high-conductance rectifiers available in either axial-lead or single-ended packages. Type numbers shown have cathode connected to case. For anodeto-case connection, add suffix "R" to type number, i. e. IN4719R
MAXIMUM RATINGS (Both Package Types) TA = 25°C unless otherwise noted
Rating
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
IN IN IN
IN IN IN IN
Symbol
4719 .4720 4721
MR MR MR
MR
4722
4723 4724 4725
MR MR MR MR MR
1030 1031 1032 1033 1034 1035 1036 1038 1.
N-Channel Power MOSFET
1N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
1A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 1N40 is universally applied in electronic lamp ballast based on half bridge topology and high efficient switched mode power supply.
FEATURES
* High switching speed * RDS(ON)=6.8Ω @ VGS=10V * 100% avalanche tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
- 1N40G-AA3-R
1N40L-TA3-T
1N40G-TA3-T
1N40L-T92-B
1N40G-T92-B
1N40L-T92-K
1N40G-T92-K
Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-223 TO-220 TO-92 TO-92
Pin Assignment 123 GDS GDS GDS GDS
Packing
Tape Reel Tube
Tape Box Bulk
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-529.c
1N40
MARKING
SOT-223
Preliminary
TO-251
Power MOSFET
TO-92
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-529.c
1N40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 400 V
Gate-Source Voltage
VGSS ±30 V
Drain Current
Continuous (TC=25°C) Pulsed (Note 2)
.
2016-02-17 : 12P10 10N15 1N40 22N20 2N40 3N40 4N40 5052H 5N40 6N10