1HN04CH

www.DataSheet4U.com Ordering number : ENA0925 1HN04CH SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 1HN04CH Features General-Purpose Switching Device Applications 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) Conditions Ratings 100 ±20 120 480 0.6 150 --55 to +150 Unit V V mA mA W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=100V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=60mA ID=60mA, VGS=10V ID=30mA, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz 1.2 100 175 6.1 7 19 2.6 1.3 8.0 9.8 Ratings min 100 1 ±10 2.6 typ max Unit V µA µA V mS Ω Ω pF pF pF Marking : LB Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communica...