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17P10 Datasheet

Part Number 17P10
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description P-Channel MOSFET
Datasheet 17P10 Datasheet17P10 Datasheet (PDF)

www.DataSheet4U.net FQB17P10 / FQI17P10 QFET FQB17P10 / FQI17P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applica.

  17P10   17P10






Part Number 17P10
Manufacturers UTC
Logo UTC
Description P-CHANNEL POWER MOSFET
Datasheet 17P10 Datasheet17P10 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 17P10 -17A, -100V P-CHANNEL POWER MOSFET  DESCRIPTION The 17P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.  FEATURES * RDS(ON) ≤ 0.18 Ω @ VGS=-10V, ID=-8.5A * Low capacitance * Low gate charge * Fast switching capa.

  17P10   17P10







P-Channel MOSFET

www.DataSheet4U.net FQB17P10 / FQI17P10 QFET FQB17P10 / FQI17P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. TM Features • • • • • • • -16.5A, -100V, RDS(on) = 0.19Ω @VGS = -10 V Low gate charge ( typical 30 nC) Low Crss ( typical 100 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D G G S D2-PAK FQB Series G D S I2-PAK FQI Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB17P10 / FQI17P10 -100 -16.5 -11.7 -66 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * 580 -16.5 10 -6.0 3.75 100 0.67 -55 to +175 300 TJ, TSTG TL Power Dissipation (TC = .


2011-09-21 : 09.F5.G1B-3A00    KVS-1001    KVS-1001-P1    KVS-3023    KVS1001    KVS5032    17P10    62003AF    AX145    BD6971FS   


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