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16N25E

Motorola
Part Number 16N25E
Manufacturer Motorola
Description MTB16N25E
Published Sep 2, 2013
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB16N25E/D Designer's TMOS E-FET .™ High Energy Power ...
Datasheet PDF File 16N25E PDF File

16N25E
16N25E

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB16N25E/D Designer's TMOS E-FET .
™ High Energy Power FET D 2 PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities.
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power s...


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