15N25-P

UNISONIC TECHNOLOGIES CO., LTD 15N25-P Preliminary Power MOSFET 15A, 250V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N25-P is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC 15N25-P is universally applied in low voltage such as automotive, high efficiency switching for DC/DC converters and DC motor control, etc.  FEATURES * RDS(ON)=0.25Ω @ VGS=10V, ID=7.5A * Low Gate Charge (Typical 33nC) * Low CRSS (Typical 25pF) * High Switching Speed  SYMBOL  ORDERING INFORMATION Package TO-220F1 TO-220F1 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel Ordering Number Lead Free Halogen Free 15N25L-TF1-T 15N25G-TF1-T 15N25L-TF1-R 15N25G-TF1-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-A24.a Free Datasheet http://www.datasheet4u.com/ 15N25-P  PARAMETER Drain-Source Voltage Gate-Source Voltage Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (unless otherwise specified) SYMBOL RATINGS UNIT VDSS 250 V VGSS ±30 V 15 A Continuous ID Continuous Drain Current Pulsed IDM 60 A Single Pulsed Avalanche Current IAS 15 A Single Pulsed Avalanche Energy EAS 340 mJ Power Dissipation PD 83 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently...