isc N-Channel Mosfet Transistor
12N60
·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V (M...
isc N-Channel
Mosfet Transistor
12N60
·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 600V (Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.7Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
600
V
VGS
Gate-Source
Voltage-Continuous
±30
V
ID
Drain Current-Continuous
12
A
IDM
Drain Current-Single Plused
48
A
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.8 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
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isc N-Channel
Mosfet Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold
Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 6.0A
IGSS
Gate-Body Leakage Current
VGS= ±30V; VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS= 600V; VGS= 0
VSD
Forward On-
Voltage
IS= 12A; VGS= 0
12N60
MIN MAX UNIT
600
V
2
4
V
0.7
Ω
±100 nA
10
μA
1.4
V
NOTICE： ISC reserves the...
