12A02SS

www.DataSheet4U.com Ordering number : ENN7486 12A02SS PNP Epitaxial Planar Silicon Transistors 12A02SS Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions unit : mm 2159A [12A02SS] Low-frequency Amplifier, high-speed switching, small motor drive, muting circuit. Features 0.8 0.3 1 0.45 0.2 2 Bottom View 0.07 0.07 1.4 Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE (sat) typ.=285mΩ [IC=1A, IB=50mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). Top View 1.4 0.3 Side View 0.1 0.25 3 Side View 0.6 3 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP 2 1 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a glass-epoxy board (20!30!1.6mm) Conditions Ratings --15 --12 --5 --0.8 --1.6 200 150 --55 to +150 Unit V V V A A mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT VCB= --12V, IE=0 VEB= --4V, IC=0 VCE= --2V, IC= --10mA VCE= --2V, IC= --50mA 300 450 Conditions Ratings min typ max --100 --100 700 MHz Unit nA nA Marking : XK Continued on next page. Any and all SANYO produc...