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Ordering number : ENN7480
12A01SP
PNP Epitaxial Planar Silicon Transistor
12A01SP
Low-Frequency G...
www.DataSheet4U.com
Ordering number : ENN7480
12A01SP
PNP Epitaxial Planar Silicon Transistor
12A01SP
Low-Frequency General-Purpose Amplifier Applications
Applications
Package Dimensions
unit : mm 2033A
[12A01SP]
4.0 2.2
Low-frequency Amplifier, small motor drive, muting circuit.
Features
Large current capacitance. Low collector-to-emitter saturation
voltage (resistance). RCE (sat) typ.=0.57Ω [IC=0.5A, IB=25mA]. Small ON-resistance (Ron).
0.4 0.5
0.6
0.4
1.8 15.0
3.0
0.4
1 2 1.3
0.7
3
1.3
1 : Emitter 2 : Collector 3 : Base SANYO : SPA
Ratings --15 --12 --5 --500 --1.0 400 150 --55 to +150 Unit V V V mA A mW °C °C
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
3.0 3.8nom
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT VCB=--12V, IE=0 VEB=-4V, IC=0 VCE=--2V, IC=--10mA VCE=--2V, IC=--50mA 300 490 Conditions Ratings min typ max --0.1 --0.1 700 MHz Unit µA µA
Marking : XP
0.7
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircr...