12A01SP

www.DataSheet4U.com Ordering number : ENN7480 12A01SP PNP Epitaxial Planar Silicon Transistor 12A01SP Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions unit : mm 2033A [12A01SP] 4.0 2.2 Low-frequency Amplifier, small motor drive, muting circuit. Features Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE (sat) typ.=0.57Ω [IC=0.5A, IB=25mA]. Small ON-resistance (Ron). 0.4 0.5 0.6 0.4 1.8 15.0 3.0 0.4 1 2 1.3 0.7 3 1.3 1 : Emitter 2 : Collector 3 : Base SANYO : SPA Ratings --15 --12 --5 --500 --1.0 400 150 --55 to +150 Unit V V V mA A mW °C °C Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 3.0 3.8nom Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT VCB=--12V, IE=0 VEB=-4V, IC=0 VCE=--2V, IC=--10mA VCE=--2V, IC=--50mA 300 490 Conditions Ratings min typ max --0.1 --0.1 700 MHz Unit µA µA Marking : XP 0.7 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircr...