FMV11N60E
Super FAP-E3 series
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
Maintains both low power loss ...
FMV11N60E
Super FAP-E3 series
FUJI POWER
MOSFET
N-CHANNEL SILICON POWER
MOSFET
Features
Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold
voltage (3.0±0.5V) High avalanche durability
Outline Drawings [mm]
TO-220F(SLS)
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Symbol VDS
Drain-Source
Voltage
VDSX
Characteristics 600
600
Continuous Drain Current Pulsed Drain Current Gate-Source
Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt
Maximum Power Dissipation
Operating and Storage Temperature range
ID IDP VGS IAR EAS EAR dV/dt -di/d...
