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11EQS09

Nihon Inter Electronics

Schottky Barrier Diode

SBD Type :11EQS09 FEATURES * Miniature Size * Low Forward Voltage Drop * High Surge Capability * 30volts trough 100volts...


Nihon Inter Electronics

11EQS09

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Description
SBD Type :11EQS09 FEATURES * Miniature Size * Low Forward Voltage Drop * High Surge Capability * 30volts trough 100volts Types Available * 26mm and 52mm Inside Tape Spacing Package Available OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.17g Rating Symbol 11EQS09 Repetitive Peak Reverse Voltage Without Fin or Average Rectified P.C.Board Output Current P.C.Board Mounted * RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range VRRM IO IF(RMS) IFSM Tjw Tstg 90 1.0 Ta=30°C 50Hz Half Sine Wave 1.0 Ta=55°C Resistive Load 1.57 40 Half Sine Wave,1cycle,Non-repetitive - 40 to + 150 - 40 to + 150 Electrical Thermal Characteristics Unit V A A A °C °C Characteristics Symbol Conditions Peak Reverse Current Peak Forward Voltage Thermal Resistance(Junction to Ambient) * :Print Lands = 5x5 mm,Both Sides IRM Tj= 25°C, VRM= VRRM VFM Tj= 25°C, IFM= 1 A Rth(j-a) Without Fin or P.C.Board P.C.Board mounted * Min Typ --- -- Max 0.5 0.85 140 110 Unit mA V °C/W 11EQS09 OUTLINE DRAWING (Dimensions in mm) ...




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