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11DF2

EIC discrete Semiconductors

(11DF1 / 11DF2) ULTRA FAST RECTIFIER DIODES

11DF1 - 11DF2 PRV : 100 - 200 Volts Io : 1.0 Ampere FEATURES : * * www.DataSheet4U.com * * * * High current capability H...



11DF2

EIC discrete Semiconductors


Octopart Stock #: O-617299

Findchips Stock #: 617299-F

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11DF1 - 11DF2 PRV : 100 - 200 Volts Io : 1.0 Ampere FEATURES : * * www.DataSheet4U.com * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Superfast recovery time ULTRA FAST RECTIFIER DIODES DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Maximum Peak Forward Surge Current, 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 1.0 A Maximum DC Reverse Current at VRRM Maximum Reverse Recovery Time ( Note 1 ) Junction Temperature Range Storage Temperature Range Ta = 63 °C SYMBOL VRRM VRMS VDC IF(AV) IFSM 11DF1 100 70 100 1.0 30 0.98 10 35 11DF2 200 140 200 UNIT V V V A A V µA ns °C °C VF IR Trr TJ TSTG - 65 to + 150 - 65 to + 150 Note : ( 1 ) Reverse ...




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