High power NPN silicon power transistors
Description
1165892
High power NPN silicon power transistors.
These devices are designed for linear amplifiers, series pass regulators, and inductive
switching applications.
Features:
Forward biased second breakdown current capability IS/b = 2.5 A dc at VCE = 60V dc.
Pb-free packages.
(TO-3)
Style 1: Pin 1. Base
2. Emitter Collector (Case)
Dimensions Minimum
Max...
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