www.eicsemi.com
10A01-10A07
SILICON RECTIFIER DIODES
PRV : 50 - 1000 Volts Io : 10 Amperes
FEATURES :
* Diffused Junc...
www.eicsemi.com
10A01-10A07
SILICON RECTIFIER DIODES
PRV : 50 - 1000 Volts Io : 10 Amperes
FEATURES :
* Diffused Junction * High current capability and Low Forward
Voltage Drop * Surge Overload Rating to 400A Peak * Low Reverse Leakage Current * Pb / RoHS Free
MECHANICAL DATA :
* Case : molded plastic * Epoxy : UL94V-0 rate flame retardant * Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 2.049 grams
D6
0.360 (9.1) 0.340 (8.6)
0.052 (1.32) 0.048 (1.22)
1.00 (25.4) MIN.
0.360 (9.1) 0.340 (8.6)
1.00 (25.4) MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL 10A01 10A02 10A03 10A04 10A05 10A06 10A07 UNIT
Maximum Repetitive Peak Reverse
Voltage Maximum RMS
Voltage Maximum DC Blocking
Voltage Average Rectified Output Current (Note 1) Ta = 50 °C Non-Repetitive Peak Forward Surge Current 8.3 ms
VRRM VRMS VDC
IO
50 100 200 400 600 800 1000 V
35
70 140 280 420 560 700
V
50 100 200 400 600 800 1000 V
10
A
Single half sine wave superimposed on rated load
IFSM
400
A
(JEDEC Method)
Maximum Forward
Voltage at IF = 10 Amps.
VF
Maximum DC Reverse Current Ta = 25 °C
IR
at rated DC Blocking
Voltage Ta = 100 °C
IR(H)
Typical Junction Capacitance...