SEMICONDUCTOR
RRooHHSS
Instantaneous on-state voltage , V
Max. On-state dissipation , W
SEMICONDUCTOR
Fig. 1 Peak o...
SEMICONDUCTOR
RRooHHSS
Instantaneous on-state
voltage , V
Max. On-state dissipation , W
SEMICONDUCTOR
Fig. 1 Peak on-state
voltage Vs. Peak on-state Current 3
2.5
2 Tj = 125 C
1.5
1
0.5
100
1000
10000
Instantaneous on-state current , A
Fig. 3 Max. Power Dissipation Vs. Mean on-state Current 2500
2000 1500 1000
0 180
Conduction Angle 60
30
120 90
180
500
0 0 200 400 600 800 1000 1200 Mean on-state current , A
Fig. 5
2000 1600
Max. Power Dissipation Vs. Mean on-state Current
DC 360
270 180
1200
Conduction Angl1e20 90
60 800 30
400
0
0
300
600
900
1200
1500
Mean on-state current , A
Case temperature , C
Case temperature , C
Transient thermal impedance , C / W
1000PT Series RRooHHSS
Fig. 2 Max. Junction to heatsink thermal impedance Vs. Time
0.03
0.02
0.01
0 0.001
0.01
0.1
Time , S
1
10
Fig. 4 Max. heatsink Temperature Vs. Mean on-state Current 140
120
0 180
100
Conduction Angle 80
60
40
20
0 0
30 60 90 120 180
200 400 600 800 1000 1200 1400 Mean on-state current , A
Fig. 6
Max. heatsink Temperature Vs. Mean on-state Current 140
360 120
100 Conduction Angle
80
60
40
20
0 0
30 60 90 120 180 270 DDC
500
1000
1500
2000
Mean on-state current , A
2500
Max. On-state dissipation , W
www.nellsemi.com
Page 2 of 2
...