0809LD60P

R.0.2P.991602-BEHRE 0809LD60P 60 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD60P is a common source N-Channel enhancement mode lateral MOSFET capable of providing 60 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes gold metallization to ensure high reliability and supreme ruggedness. CASE OUTLINE 55QU Common Source ABSOLUTE MAXIMUM RATINGS Power Dissipation Device Dissipation @25°C (Pd) Thermal Resistance (θJC) Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Temperatures Storage Temperature Operating Junction Temperature 170 W 1.0°C/W 65V ±20V -65 to +200°C +200°C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL ΒVdss Idss Igss Vgs(th) Vds(on) gFS Ciss Crss Coss CHARACTERISTICS Drain-Source Breakdown Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Drain-Source On Voltage Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance TEST CONDITIONS Vgs = 0V, Id = 2ma Vds = 28V, Vgs= 0V Vgs = 20V, Vds = 0V Vds = 10V, Id = 100ma Vgs = 10V, Id = 3A Vds = 10V, Id = 3A Vds = 28V, Vgs = 0V, F = 1 MHz Vds = 28V, Vgs = 0V, F = 1 MHz Vds = 28V, Vgs = 0V, F = 1 MHz 2 4 0.7 2.2 90 5 60 MIN 65 TYP 70 1 1 5 MAX UNITS V
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A V V S pF pF pF FUNCTIONAL CHARACTERISTICS @ 25°C GPS ηd IMD3 Common Source Power Gain Drain Efficiency Intermodulation Distortion, 3rd Order Load Mismatch Vds = 28V, Idq = 0.3A, F = 900MHz, Pout = 60W Vds = 28V, Idq = 0.3A, F = 900MHz, P...