MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12BM
MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR12BM
• IT (AV) . . . 12A • VDRM . . 400V/600V • IGT . . . . 30mA APPLICATION Automatic strobe flasher
OUTLINE DRAWING
1. 3 4
10. 5 MIN
Dimensions in mm
1. 5 MAX
3. 8 MAX 8. 6
12. 5 MIN
TYPE NAME VOLTAGE
CLASS
1
3
1
∗
0. 5
2. 6
1 CATHODE 2 ANODE 3 GATE 4 ANODE
∗ Measurement
point of case temperature
4. 5
0. 8 2. 5 2. 5
10. 5
TO-220C
2
MAXIMUM RATINGS
Symbol
Parameter
VRRM VRSM VR (DC) VDRM VD (DC)
Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage
Voltage class 8 12 400 600 500 720 320 480 400 600 320 480
Symbol IT (RMS) IT (AV) ITSM
I2t
Parameter RMS on-state current Average on-state current Surge on-state current
I2t for fusing
PGM PG (AV) VFGM VRGM IFGM Tj Tstg
—
Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight
Conditions Commercial frequency, sine half wave, 180° conduction, Tc=91°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Typical value
Ratings 18. 8 12. 0 360
544
5 0. 5
6 10
2 –40 ~ +125 –40 ~ +125
1. 5
Unit
V V V V V
Unit A A A
A2s
W W V V A °C °C g
Feb. 1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12BM
MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IRRM IDRM VTM VGT VGD IGT IH Rth (j-c) Rth (j-a)
Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current
Thermal resistance
Test...
CR12BM PDF File
