THYRISTOR - Mitsubishi Electric Semiconductor
Description
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉
CR12AM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR12AM
OUTLINE DRAWING
10.
5 MAX
3.
2±0.
2
Dimensions in mm
4.
5 4
1.
3
16 MAX
∗
12.
5 MIN 3.
8 MAX
TYPE NAME VOLTAGE CLASS
1.
0
0.
8
2.
5
7.
0
φ3.
6±0.
2
2.
5
4.
5
0.
5
2.
6
123 24 1 2 3 4
∗
Measurement point of case temperature
• IT (AV) .
.
.
12A • VDRM .
.
400V/600V • IGT .
.
.
.
30mA APPLICATION Switching mode power supply, ECR, motor control
3 1
CATHODE ANODE GATE ANODE
TO-220
MAXIMUM RATINGS
Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state Voltage class 8 400 500 320 400 320 12 600 720 480 600 480 Unit V V V V V
Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg —
Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing
Conditions Commercial frequency, sine half wave, 180° conduction, Tc =91°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Ratings 18.
8 12.
0 360 544 5 0.
5 6 10 2 –40 ~ +125 –40 ~ +125
Unit A A A A2s W W V V A °C °C g
Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value
2.
0
Feb.
1999
MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉
CR12AM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol IRRM IDRM VTM VGT VGD IGT IH R th (j-c) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding...
Similar Datasheet
