High Voltage Transistors - Zowie Technology
Description
Zowie Technology Corporation
High Voltage Transistors Lead free product Halogen-free type
FEATURE ƽ We declare that the material of product compliance with RoHS requirements.
MMBT5550GH MMBT5551GH
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage
Symbol V CEO V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value 140 160 6.
0 600
3
1 2
SOT-23
Unit Vdc Vdc Vdc mAdc
1
BASE
3
COLLECTOR
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
RθJA PD
RθJA TJ , Tstg
Max Unit
225 mW
1.
8 mW/°C 556 °C/W
300 mW
2.
4 417 –55 to +150
mW/°C °C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3) (I C = 1.
0 mAdc, I B = 0)
MMBT5550GH MMBT5551GH
V (BR)CEO
Collector–Base Breakdown Voltage (I C = 100 µAdc, I E = 0)
MMBT5550GH MMBT5551GH
V (BR)CBO
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
Collector Cutoff Current
( V CB = 100Vdc, I E = 0) ( V CB = 120Vdc, I E = 0)
( V CB = 100Vdc, I E = 0, T A=100 °C)
MMBT5550GH MMBT5551GH MMBT5550GH
( V CB = 120Vdc, I E = 0, T A=100 °C)
MMBT5551GH
Emitter Cutoff Current
( V BE = 4.
0Vdc, I C= 0)
1.
FR–5 = 1.
0 x 0.
75 x 0.
062 in.
2.
Alumina = 0.
4 x 0.
3 x 0.
024 in.
99.
5% alumina.
3.
Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.
0%.
V (BR)EBO I CBO
I EBO
140 160
160 180
6.
0
— — — —
—
Max
— —
— —
—
100 50
100 50 50
Unit
Vdc
Vdc Vdc nAdc µAdc nAdc
REV.
0
Zowie Technology Corporation
Zowie Technology Corporation
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain (I C = 1.
0 mAdc, V CE = 5.
0 Vdc)
MMBT5550GH MMBT5551GH...
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