DatasheetsPDF.com

RGP30D

Vishay
Part Number RGP30D
Manufacturer Vishay
Description Glass Passivated Junction Fast Switching Rectifier
Published May 2, 2016
Detailed Description RGP30A, RGP30B, RGP30D, RGP30G, RGP30J, RGP30K, RGP30M www.vishay.com Vishay General Semiconductor Glass Passivated J...
Datasheet PDF File RGP30D PDF File

RGP30D
RGP30D


Overview
RGP30A, RGP30B, RGP30D, RGP30G, RGP30J, RGP30K, RGP30M www.
vishay.
com Vishay General Semiconductor Glass Passivated Junction Fast Switching Plastic Rectifier SUPERECTIFIER® DO-201AD FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.
2 μA • High forward surge capability • Solder dip 275 °C max.
10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) VRRM 3.
0 A 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM VF IR TJ max.
Package 125 A 1.
3 V 5.
0 μA 175 °C DO-201AD Diode variation Single die TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters and freewheeling diodes for consumer and telecommunication.
MECHANICAL DATA Case: DO-201AD, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL RGP30A RGP30B RGP30D RGP30G RGP30J RGP30K RGP30M UNIT Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.
375" (9.
5 mm) lead length at TA = 55 °C Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load Maximum full load reverse current, full cycle average 0.
375" (9.
5 mm) lead length at TA = 55 °C Operating junction and storage temperature range VRRM VRMS VDC IF(AV) IFSM IR(AV) TJ, TSTG 50 35 50 100 200 400 600 800 1000 V 70 140 280 420 560 700 V 100 200 400 600 800 1000 V 3.
0 A 125 A 100 μA -65 to +175 °C Revision: 07-Nov-16 1 Document Number: 88704 For technical question...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)